'jsuzu <^e.mi-l.onauctoi ^pioaucti, line. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 t6401, t6411, t6421 series 30-a silicon triacs for power-switching and power control feature!: 800v, 125 deg. c tj operating high dv/dt and dl/dt capability low switching losses high pulse current capability low forward and reverse leakage sipos oxide glass multilayer passivation system advanced unisurfacq construction precise ion implanted dilluslon source terminal designations press-fit types stud types isolated-stud types t6401 series t6411 series t6421 series maximum ratings, absolute-maximum values: repetitive peak off-state voltage:' gale open, tj - -50 to 125 c rms on-state current (conduction angle - 360): case temperature tc = 80 c (press-fit types) ' 85? c (stud types) ? 80 c (isolated-stud types) for other conditions ,,.,,. peak surge (non-repetitive) on-state current: for one cycle of applied principal voltage 60 hz (sinusoidal) 50 hz (sinusoidal) for more than one cycle of applied principal voltage rate-of-change of on-state current: vom = vobom. iot = 200 ma. t, - 0.1 /? (see fig. 13) fusing current (lor trite protection): tj = -40 to 100 c. i * 1.25 to 10 ms peak gate-trigger current:1 for 1 ps max.. see fig. 7 gate power dissipation peak (for 1 fis max,. iqtw < 4 a, see fig. 7) average temperature range:* storage operating (case) terminal temperature (during soldering): for 10 s max. (terminals and case) stud torque: recommended , maximum (do not exceed) t6401b t6411b T6421B 200 t6401d t6411d t6421d 400 t6401m t6401n t6411m t6411n tb421m ? di/dt i't 'gtm tc tr "for either polarity of ma ?for either polarity to gat afor temperature measureme ain terminal 2 voltage (vmt?) with reference to main terminal 1. te voltage (vg) with reference to main terminal 1, rement reference point, see dimensional outline. 30 30 30 see fig. 3 , . 300 - . 265. . see fig. 4 100 450 ~_ 12 . 0.75 - . -65 to 150 . . -65 to 100 . -226 . -35- . 50- a's a w w in-lb in-lb nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
t6401, t6411, t6421 series electrical characteristics, at maximum ratings unless otherwise specified, and at indicated temperature characteristic symbol peak off-slate current:* gate open, tj = i25c. vohom= max. rated value iohom maximum on-stale voltage:* fori,= 100 a (peak),tg*25c v? dc holding current:* gate open, initial principal current = 150 ma (dc), v0 = 12v: tc=25c iho for other case temperatures critical rate-of-rise of commutation voltage:* for vd = venom i tchmsi = 30 a, commulating di/dt - 16 a/ms, gate unsnergized (see fig. 14): tc = 90 c (press-fit types) ' . .... = 85 c (stud types) dv/dt = 80 c (isolated-stud types) critical rate-of-rlse of off-state voltage:* for vd - vdnom, exponential voltage rise, gate open, tc = 125c; t6401b, t6411b, T6421B t6401d, t6411d, t6421d ... dv/dt t6401m.t6411m, t6421m t6401n t6411n dc gate-trigger current:*1 mode vmt2 v0 for vd" 12 v (dc), l+ positive positive rl = 30n, 111- negative negative tc=25c i" positive negative igt iii* negative positive dc gate-trigger voltage:** forvd = 12v(dc), rt = 30 o, tc=25c ,, for other case temperatures forvo = vutom. rl= 125 n, tc = 100" c gale-controlled turn-on time: (delay time ? rise time) forv0= vorou, lot = 200ma, t,= 0.1 v$. ir* 45 a (peak) tc = 25c (see figs 7 & 12) . t,, thermal resistance, junctlon-to-case: steady-state press-lit types , stud ,.,,... ,,,,,,.... . rwc transient (press-fit & stud types) thermal resistance, juncllon-to-hex (stud, see dim. outline): limits for all types unless otherwise specified mln. _ - 3 3 3 40 25 20 10 si : 0.2 - ? typ. 0.2 2.1 25 see fig. 6 20 20 20 200 150 100 50 15 20 30 40 e figs, 8 ( 1.35 see fig. 1 1.7 see fig. 2 ? max. 4 2.5 60 - 50 50 80 80 !c9 2.5 j 3 0.8 0.9 1 units ma v ma v///s v/fjs ma v /* c/w ?for either polarity of main terminal 2 voltage (vuu) with reference to main terminal 1. ?for either polarity of gate voltage (vo) with reference 10 main terminal 1.
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